Hiring: Senior Staff Datapath Design Engineer and Circuit Design Engineer, VLSI Design Engineering Company: Sandisk Location: Milpitas, CA Job Posted Time: 2026-09-02 19:50:15 Target Skills & Keywords : Chai, HBase About the job Required Skills: •The Memory Technology Group is at the core of the Legacy Sandisk Engineering Organization. We are building a cutting edge 3D memory in our multiple billion dollars Fab. Our memory provides performance, power, and endurance at a lower cost but on quality. The Memory Technology organization is a strategic entity for the company, and we are growing. Our group functions as a start-up within Sandisk, and offers a creative, fast paced, entrepreneurial work environment where you’ll be at the center of Sandisk innovation. •If you thrive in a fast-paced, dynamic environment, are looking to be a part of a team that is developing exciting new processes, and you are eager to take on new opportunities and challenges with a sense of urgency and enthusiasm, then this could be an exciting opportunity for you. •Essential Duties And Responsibilities •Architect and design circuits at transistor level and gate level for leading-edge 3D NAND flash memory focusing on high-speed datapath circuit design and page buffers design. •Perform block level and full chip circuit simulations to meet all performancespecifications. •RTL design, synthesis, static timing analysis andverification in verilog for page buffer and data path control logics. •Conduct silicon debugging and evaluation with micro-probing. •Collaborate with characterization engineers to fully characterize silicon, and partner with other designers to develop solutions for silicon issues. •Generate detailed technical reports and presentations. Qualifications: •Master'sdegree in Electrical Engineering or equivalent with 12or more years of relevant experience. •Knowledge and/or experience in data path design (Nand, DRAM, LPDDRor HBM) •Knowledge in decoding concept and redundancy concept •Knowledge and/or experience in Nand page buffer design •Knowledge and/or experience in RTL design •Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage •Knowledge and/or experience in High speed I/O circuit is a big plus •A strong device background and experience with evaluating new process technologies for use in design is preferre Compensation: •$166,200 •$282,500 Interested candidates, please apply directly through the job posting on company's career page or try via AI auto apply on this platform. Don't miss this opportunity to join a forward-thinking team!